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IGBT

650V,1200V 超级结技术,开关损耗低,芯片薄,工作频率高; 混封半/全电流SiC SBD,更高开关频率和效率; TO-247-3或TO-247P-3 标准封装,TO-247-4L 封装开尔文结构效率更优。

  • 电压
    650
    750
    1200
  • 电流
    200
    150
    120
    100
    75
    50
    40
    25
    15
  • VCE_SAT/EOFF(mJ)@Tc=25℃
  • IGBT类型
    FS
    SJ1
    SJ2
  • 合封二极管
  • Status
    MP
    Pre-release
  • IGBT工艺
  • Package
    TO-263-7L
    TO-263-2L
    TO-247Plus-3L
    TO-247-3L
    TO-247Plus-4L
    TO-247-4L

显示6种产品

产品型号
电压
电流
VCE_SAT/EOFF(mJ)@Tc=25℃
IGBT类型
合封二极管
Status
IGBT工艺
Package
HKQ100N65FMTA 6501001.45/2.4FMFFull/Low VfMPFSTO-247Plus-3L
HKW75N65SHRA 650751.65/0.8SHF30A SiC SBDMPSJ1TO-247-3L
HKZ75N65SHRA 650751.65/0.8SHF30A SiC SBDMPSJ1TO-247-4L
HKW75N65SHEB 650751.65/0.8SHFFull/Low VfMPSJ1TO-247-3L
HKQ75N120FHEA 1200751.91/2.9FHFFull/Low VfMPFSTO-247Plus-3L
HKW40N120FHEI 1200401.66/2.1FHFFull/Low VfMPFSTO-247-3L
HKW40N120FHEQ 1200401.66/2.1FHFFULL/AECQMPFSTO-247-3L
HKW40N120FHRA 1200401.66/2.1FHF25A/SiCSBDMPFSTO-247-3L
HKW40N120FPTA1 1200401.61/2.84SCFull/Low VfMPFSTO-247-3L
HKZ75N65SHEB 650751.65/0.8SHFFull/Low VfMPSJ1TO-247-4L
AHKQ200N75FMEO 7502001.3/7SCFull/Low VfPre-releaseFSTO-247Plus-3L
HKW75N65S2UEE 650751.45/0.4SHPFull/Low QrrPre-releaseSJ2TO-247-3L
HKW50N65SHEE 650501.65/0.8SHFFull/Low QrrPre-releaseSJ1TO-247-3L
HKW40N65SHEE 650401.65/0.8SHFFull/Low VfPre-releaseSJ1TO-247-3L
AHKW75N65SHEL 650751.6/1.14SHFFull/Low VfPre-releaseSJ1TO-247-3L
HKQ100N120SHEM 12001001.7/2.5SHFFull/Low VfPre-releaseSJ2TO-247Plus-3L
HKY100N120SHEM 12001001.7/2.5SHFFull/Low VfPre-releaseSJ2TO-247Plus-4L
HKQ75N120FHEM 1200751.66/2.5FHFFull/Low VfPre-releaseFSTO-247Plus-3L
HKW40N120FPTA1 1200401.61/2.84SCFull/ Low VfPre-releaseFSTO-247-3L
HKW25N120FPTA1 1200251.61/2.7SCFull/Low VfPre-releaseFSTO-247-3L
HKW15N120FPTA1 1200151.61/2.6SCFull/Low VfPre-releaseFSTO-247-3L