大功率分立器件
峰值功率20W-1000W； 工作频率10MHz-6GHz；基于自主知识产权的28V，50V ，65V和500V LDMOS和GaN工艺平台开发 全国产供应； 封装材料自主开发设计，具有低成本、高可靠性。
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产品型号
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Min. Freq.（MHz）
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Max. Freq.（MHz）
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VDD(V)
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Pavg(dBm)
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DE@Pavg
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Gain(dB)
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ACPR
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Test Freq.(MHz)
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MP Status
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Package
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Process
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|---|---|---|---|---|---|---|---|---|---|---|---|
| HTH8G09P550S | 700 | 960 | 48 | 49 | 53.40% | 20.4 | -28.8 | 758 | MP | ACC2110S-4L | LDMOS |
| HTH9G09P550S | 700 | 960 | 48 | 49 | 54 | 20 | -25 | 945 | MP | ACS2110S-4L | LDMOS |
| HTH9G09P700S | 758 | 803 | 48 | 50.5 | 56 | 19.5 | -25 | 780 | MP | ACS3210S-4L | LDMOS |
| HTN9G22P370S | 1805 | NA | 28 | 47.3 | 48 | 16 | -30 | 2140 | MP | ACS2110 | LDMOS |
| HTN7G21S040P(G) | 700 | 2100 | 28 | 36 | 15.40% | 15.4 | -48 | 1800 | MP | TO-270 | LDMOS |
| HTN7G38S007P | 700 | 3800 | 28 | 28.8 | 17.4 | 14.2 | -47.1 | 3400 | MP | PDFN5*5 | LDMOS |
| HTN8G27S015P | 700 | 2700 | 28 | 30 | 12 | 20.2 | -49.5 | 2600 | MP | PDFN5*5 | LDMOS |
| HTN8G36S015P | 3300 | 3600 | 28 | 30 | 11.9 | 18.2 | -48.9 | 3450 | MP | PDFN5*5 | LDMOS |
| HTN9G49S007P | 4800 | 4900 | 24 | 28.8 | 15% | 15.2 | -45 | 4800 | MP | DFN5x5 | LDMOS |
| HTN7G09S060P | 100 | 960 | 28 | 39 | 19.5 | 21.8 | -46.3 | 940 | MP | TO270 | LDMOS |
| HTH1D27P550S | 2496 | 2690 | 48 | 49 | 56.30% | 15.7 | -26.8 | 2496 | MP | ACS2110S-4L2L | GaN |
