产品详细信息

      华太RF LDMOS产品已广泛应用于2G/3G/4G移动通信基站、直放站等行业领域,打破了国外公司功率管的垄断地位,提升了我国通信领域核心产品竞争力和产业链的完整性和安全性。

      华太研发的GSM 900MHz 140W 产品、TDD-LTE 1880MHz-2025MHz 120W、700MHz-2700MHz 10W等产品已经在国际一线通信设备公司量产,性能与国际同行相当,实现了通信基站领域RF LDMOS的国产化突破。


Part Num.Min.Freq
(MHz)
Max.Freq
(MHz)
VDD
(V)
Pavg
(dBm)
DE
(%)
Gain
(dB)
ACPR
(dBc)
Test Freq
(MHz)
MP StatusPackageProcessDown
HTN7G27S006P70027002828.819.219.3-45.6@2140MPPDFN6*5LDMOS


HTN7G27S010P7002700283118.119.1-48@2140MPPDFN6*5LDMOS

HTN7G38S007P70038002828.817.414.2-47.1@3400MPPDFN5*5LDMOS

HTN7G27S020P7002700283518.818-46.1@2140MPTO270LDMOS

HTN7G21S040P7002100283616.516.1-47@1840MPTO270LDMOS

HTN7G09S060P100960283919.521.8-46.3@940MPTO270LDMOS

HTN7G09S200H9209602847.533.220.5-36.5@940MPH2110S-2L2LLDMOS

HTN7G21S160H18052170284221.917.3-45@1840MPH2110S-2L2LLDMOS

HTN7G21P160H180521702844.84016.7-35@1960MPH2110S-4L2LLDMOS

HTN7G15P180H130015002844.841.419.9-32.8@1457MPH2110S-4L2LLDMOS

HTN9G38S010P700380028311918.9-42@2645MPPDFN5*5LDMOS


HTN9G27S020P7002700283419.6717.6-42@2655MPTO270LDMOS


HTN9G38P100H330038002841.83013-36@3500Q1/2019H2110S-4L2LLDMOS
HTN9G23P160H230024002844.84016-32@2300Q1/2019H2110S-4L2LLDMOS
HTN9G26P160H250027002844.83814-32@2645Q1/2019H2110S-4L2LLDMOS
HTN9G09S270H92096028483320-35@940Q1/2019H2110S-2L2LLDMOS
HTN9G20S230H180019202847.53118-29@1840Q1/2019H2110S-2L2LLDMOS
HTN9G22S230H210022002847.53016-29@2140Q1/2019H2110S-2L2LLDMOS
HTH9G09P400H7009604849.35017.4-32@940Q1/2019H2110S-4LLDMOS
HTN9G27M040P2500270028384830-32@2600Q3/2019MMIC QFNLDMOS
HTN9G36M040P3300360028384229-32@3500Q3/2019MMIC QFNLDMOS
HTN9G27M050P2500270028394830-32@2600Q4/2019MMIC QFNLDMOS
HTN9G36M050P3300360028394229-32@3500Q4/2019MMIC QFNLDMOS


Part Num.Min.Freq
(MHz)
Max.Freq
(MHz)
VDD
(V)
Psat
(dBm)
OIP3Gain
(dB)
MP StatusPackageProcess
HTA50P3180050005253829Q2/2019QFNGaAs pHEMT
HTB270225002700533N/A34Q3/2019QFNGaAs HBT
HTB360233003600533N/A33Q3/2019QFNGaAs HBT


Part Num.Min.Freq
(MHz)
Max.Freq
(MHz)
VDD
(V)
Pavg
(dBm)
DE
(%)
Gain
(dB)
ACPR
(dBc)
Test Freq
(MHz)
MP StatusPackageProcess
HTH2N60S010H700600048353517.5-37@2600Q3/2019DFNGaN on SiC
HTH2N60S020H700600048383217-37@2600Q3/2019DFNGaN on SiC
HTH2N60S030H700600048403217-37@2600Q3/2019DFNGaN on SiC
HTH2N36M040P3300360048384530-30@3500Q3/2019MCM QFNGaN on SiC
HTH2N36M050P3300360048394530-30@3500Q3/2019MCM QFNGaN on SiC
HTH2N22P500H1800220048495215-28@1840Q3/2019H2110S-4LGaN on SiC
HTH2N27S100H250027004844.55216-28@2600Q3/20192*H0906SGaN on SiC
HTH2N27P500H2500270048495015-28@2600Q3/2019H2110S-4LGaN on SiC


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